研究報告

2025 中國SiC Power Device市場分析報告

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發佈日期

2025-12-02

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更新頻率

不定期

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報告格式

PDF



This report analyzes the Chinese SiC power device market, driven by robust demand from EV high-voltage platforms and AI data centers. While intense price competition accelerates industry consolidation, it simultaneously propels the technological transition toward larger-sized wafers. Domestic manufacturers are enhancing competitiveness through vertical integration, while emerging applications in optics are creating new value opportunities for the supply chain.

Key Highlights

  • EVs remain as the major driver of the market, while AI data centers and industrial applications are forming structural opportunities. China’s SiC power device market could potentially surpass US$6 billion by 2030.
  • Mass production initiated for 8” SiC wafers as capacity expansions enter a new phase.
  • Full series of SiC products (substrates/epitaxial wafers/devices) are hitting rock bottom in prices as industrial integration expedites.
  • Optical and advanced packaging applications could inject new momentum for China’s SiC substrate market.

Table of Contents

  1. Overview
  2. Analysis of Chinese Market for SiC Substrates and Epitaxy
  3. Analysis of Chinese Market for SiC Devices
  4. Analysis on Dynamics of Major Chinese SiC Suppliers
  5. TrendForce’s View

<Total Pages: 61>

備註:本研究報告只有英文及簡中版本

2025 China’s SiC Substrate Market Size Forecast


報告分類: 化合物半導體




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